, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor 2SC2507 description ? collector-emitter sustaining voltage- : vceofsusr 400v(min) ? fast switching speed ? collector-emitter saturation voltage- tr 0.7v(max.)@lc=10a applications ? designed for use in high-voltage, high-speed , power switching in inductive circuit, they are particularly suited for 115 and 220v switchmode applications such as swit- ching regulator's, inverters. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icm ib ibm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous base current-peak collector power dissipation @ tc=25 c junction temperature storage temperature range value 500 400 7 20 40 7 14 200 150 -55-150 unit v v v a a a a w "c "c thermal characteristics symbol rth j-c parameter thermal resistance, junction to case max 0.625 unit c/w ", pin 1.base ys 2. bjiitter h* 3 . co llect 0 r (cas e) i to-3 package 2 t t * it- c v- m t ?? ? a *j 1 1 "f i : x^jtx / j ?" tj ?w'j <- a. j/ti 7x ^ t*' >^ / >x_^/ ' wi^] illill mm mih max a 3900 b 25 30 3s.s7 ( 7 so e ec d ossd 1 10 e 5 4(1 ,_ t 60 ^ 1092 h s^e k u.iatj350 l 1675 17 os k 19 ?0 1962 q 4 00 4 20 (i jq'ai -$0 20 v 4 30 t" 4 50~ ^ i sb t , b 1 quality semi-conductors
silicon npn power transistor 2SC2507 electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) vce(sat) vee(sat) icbo iceo iebo hpe-1 hfe-2 fy parameter collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product conditions lc= 50ma; ib= 0 ic=10a; ib=1a lc= 10a; ib= 1a vcb= 500v; ie= 0 vce= 320v; ib= 0 veb= 7v; lc= 0 lc=10a;vce=2v lc= 20a; vce= 2v ic=1a;vce=10v min 400 15 8 typ. 20 max 0.7 1.5 100 100 1.0 unit v v v m a m a ma mhz switching times ton tstg tf turn-on time storage time fall time ic=10a, lbi=-lb2=2a rl= 30 ; vbb2= 4v 1.0 3.0 0.7 u s m s (j s
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